Transmission of Electromagnetic Radiation through an Electron Inversion Layer of Finite Thickness in a Metal-oxidesemiconductor (mos) Structure

We investigate the transmission coefficient for propagation of electromagnetic radiation, of frequency w, through an electron inversion layer, of finite thickness d, in the metal-oxide-semiconductor (MOS) structure. The corresponding result in the case where the inversion layer is treated as infinitely thin (two-dimensional electron gas) has been given by Chiu et al. Subject to the assumptions d/c 4 1 and constant density, it is possible to establish a point of contact between the finite d result and the Chiu et al. result. This comparison demonstrates that it is a good approximation to treat the inversion layer as a two-dimensional system and also provides a recipe for the calculation of the surface conductivity o@, viz. a@)= ad, where (T is the three-dimensional conductivity.